Session Index

Optical dispersion results from the index of refraction of a material varying with the frequency of incident light. Accurate control over this property is vital. For example, it mitigates pulse spreading in optical fibers, which are the backbone of modern telecommunications, and enables pulse compression in ultrafast laser optics (2018 Nobel Prize in Physics). In this talk, I will begin with an introduction to the design, simulation, and fabrication of metasurface components with a focus on metalenses. Subsequently, I will illustrate how to control metasurface dispersion by customizing the group delay and group delay dispersion of constituent nanostructures. Such dispersion-engineered metasurfaces enable achromatic metalenses, aberration-corrected spectrometers, as well as lens-aberration correctors designed for simple singlets to complicated microscope objectives. My talk will be summarized by detailing on-going works involving metasurface-enabled superachromatic and broadband high-efficiency lenses and pointing out future emerging applications. These demonstrations are vastly applicable to machine vision, autonomous vehicles, optical communication, augmented and virtual reality devices, and more.

 

Investigated the performance of N-side up thin-epilayer, AlGaInP based vertical micro light-emitting diodes (VLEDs) with different chip sizes on composite metal (copper/Invar/copper; CIC) substrate were fabricated. The obtained data suggested that μ-LEDs with CIC substrate could be extended instead of conventional vertical electrodes for thin-film micro LEDs applications

 

GaN-based photodiode embedded with porous-AlGaN distributed Bragg reflectors was demonstrated. High refractive index n+-AlGaN:Si epitaxial layers were transformed into low refractive index porous-AlGaN layers in the n+-AlGaN/n-AlGaN:Si stack structure through electrochemical etching process. Photocurrent and efficiency of GaN photodiode with porous DBR structure was increased due to light recycling process.

 

A complementary metal-oxide-semiconductor (CMOS)-compatible active antenna based on embedded inverse deep trench (EIDT) nickel silicide (NiSi) film based antenna structure, is demonstrated.These EIDT NiSi antennas take advantage of intrinsic loss of NiSi film, surface plasmon resonance phenomenon and three-dimensional cavity effect to provide efficient and polarization-insensitive absorption at telecommunication wavelengths.

 

This study investigated the use of collagen materials to fabricate resistive-switching memory devices with ITO/Collagen/Al structure. The devices demonstrated decent operation characteristics including ON/OFF ration >10^3,data retention time exceeded 10^4 seconds, SET/RESET voltage of -0.92V and 0.5V, respectively, and switching cycles of about 168 times.