Session Index

Nanophotonic Materials and Devices

Nanophotonic Materials and Devices I
Thursday, Dec. 3, 2020  13:15-14:45
Presider: Prof. Kuei-Yi Lee
Prof. Shun-Wei Liu
Room: HYB International Conference Hall
13:15 - 13:45 Manuscript ID.  0003
Paper No.  2020-THU-S0101-I001
Invited Speaker:
Kuan Yew Cheong

Bio-organic based Resistive Switching Memory Towards Artificial Synapses for Neuromorphic Applications
Kuan Yew Cheong;Feng Zhao

Two essential issues facing in the era of Internet-of-Things are energy and electronic waste. To address these issues simultaneously, utilization of bio-organic based artificial synapses to produce neuromorphic computing can be adopted. In this review, bio-organic based resistive-switching memory and potential usage of Aloe polysaccharides for artificial synapses is discussed.

13:45 - 14:00 Manuscript ID.  0533
Paper No.  2020-THU-S0101-O001
Yi-Cheng Chung
Award Candidate
Photonic-Phononic Crystal Nanobeam Cavity Nanosensors
Yi-Cheng Chung;Yu-Feng Lin;Nan-Nong Huang;Jin-Chen Hsu;Tzy-Rong Lin

The design and simulation of dual photonic-phononic crystal slot nanobeam nanosensors are presented. The incorporation of a gradient cavity can concentrate the optical and acoustic modes in the cavity to enhance the interactions between light/sound and analyte solution. The results provide a sensing application based on a dual photonic-phononic crystal.

14:00 - 14:15 Manuscript ID.  0080
Paper No.  2020-THU-S0101-O002
Ting-Wei Chien
Award Candidate
Room temperature current modulation of plasmonic nanolasers on graphene-insulator-metal platform
Ting-Wei Chien;Zhen-Ting Huang;Heng Li;Tien-Chang Lu

We experimentally demonstrate the current modulation of plasmonic nanolasers using graphene-insulator-metal (GIM) platform at room temperature. The threshold and peak position of lasing peak could be tuned by current injection. The diminishing of lasing intensity, and the blue shifts of peak positions were observed when the applying current was increased.

14:15 - 14:30 Manuscript ID.  0389
Paper No.  2020-THU-S0101-O003
Liang-Xuan Lan
Laser power conversion using high-voltage and shade resilient CMOS photovoltaic module
Liang-Xuan Lan;Jian-Fu Liao;Jen-Chien Shih;Yu-Ching Cheng;Yung-Jr Hung

A high-voltage and shade-resilient photovoltaic module provides an open-circuit voltage of 4.26 V and an electrical power of 1.1 mW. Its output power is still 0.47 mW when half of the PV module is optical shaded. This is ten-fold improvement over the shading performance of PV module without bypass diode.

14:30 - 14:45 Manuscript ID.  0372
Paper No.  2020-THU-S0101-O004
You-Xuan Li
Impact of Annealing Environment of Performance of InWZnO Conductive Bridge Random Access Memory
You-Xuan Li;Po-Tsun Liu;Chih-Chieh Hsu;Kai-Jhih Gan;Dun-Bao Ruan;Yu-Chuan Chiu

The annealed IWZO CBRAM devices are obviously increased two orders of magnitude endurance cycles as compared with the as-deposited device. The resistance uniformity of the IWZO device with N2 annealing are better than of those with O2 annealing. This result has given notable improvement of a TAOS device.