Session Index

Nanophotonic Materials and Devices

Nanophotonic Materials and Devices III
Thursday, Dec. 3, 2020  16:20-17:50
Presider: Prof. Jih Shang Hwang
Prof. Szu-Cheng Cheng
Room: HYB International Conference Hall
Notes:
16:20 - 16:50 Manuscript ID.  0816
Paper No.  2020-THU-S0103-I001
Invited Speaker:
Chao-Hsin Wu

Toward Double-digit Spontaneous Bandwidth and Opto-Electrical Integrated Circuits with Light-emitting Transistors and Transistor lasers.
Chao-Hsin Wu

In this talk, we will introduce the unique three-terminal, three-port optoelectronic device—light-emitting transistor, which potentially can bridge the technology gap of micro-optoelectronics. The device physics and its high-speed electrical and optical characteristics will be presented, offering the promise of integration and unprecedented size, weight and cost reduction.

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16:50 - 17:05 Manuscript ID.  0183
Paper No.  2020-THU-S0103-O001
Bing-Hong Chuang
Award Candidate
Optimization of Epitaxially Growth Process for Photonic Crystal Surface Emitting Lasers
Bing-Hong Chuang;Lih-Ren Chen;Kuan-Chih Huang;Tien-Chang Lu

We investigate the regrowth parameters, as well as pre-treatment conditions for PCSELs. The epitaxy quality is shown to be essential for the device performance. Furthermore, the optimized regrowth condition is also applicable for photonic crystals consisted of triangular air holes, which open the window for further improvement.

 
 
17:05 - 17:20 Manuscript ID.  0495
Paper No.  2020-THU-S0103-O002
Guan-Hao Chang
Full-color Display Technology Achieve by Combining Nano-ring Structure Micro LED and Quantum Dots
Guan-Hao Chang;Chun-You Fan;Yu-Ming Huang;Sung-Wen Huang Chen;Jia-Min Shieh;Hao-Chung Kuo

NR-μLED were fabricated on monolithic epitaxial wafers. The color of NR-μLED can tune from yellow to blue by changing wall width and indium content. Red QDs were printed to NR-μLEDs for a full-color display. Al2O3 was deposited on the sidewall of NR-μLEDs, which improved the performance of the display.

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17:20 - 17:35 Manuscript ID.  0611
Paper No.  2020-THU-S0103-O003
Szu-Cheng Cheng
Compact Edge States of Exciton-polariton Condensates with Spin-orbit Coupling
Ting-Wei Chen;Szu-Cheng Cheng

Compact edge states can be excited in exciton-polariton condensates. The effects of spin-orbit coupling result in the flatbands in which the polariton localization can be formed inside the gap. We found the edge states are only extended inside a fraction of a single lattice period.

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17:35 - 17:50 Manuscript ID.  0223
Paper No.  2020-THU-S0103-O004
Chun-Wei Huang
In-plane Gate Graphene Transistors Fabricated by Using Electron Beam Lithography
Chun-Wei Huang;Po-Cheng Tsai;Shoou-Jinn Chang;Shih-Yen Lin

In-plane gate graphene transistors are fabricated on graphene grown directly on sapphire substrates by using e-beam lithography. With no interface with dielectric layers, higher field-effect mobility than the Hall mobility value are observed for the device, which is attributed to the reduced carrier scatterings of the thin channel length.