Session Index

In this talk, we will introduce the unique three-terminal, three-port optoelectronic device—light-emitting transistor, which potentially can bridge the technology gap of micro-optoelectronics. The device physics and its high-speed electrical and optical characteristics will be presented, offering the promise of integration and unprecedented size, weight and cost reduction.

 

We investigate the regrowth parameters, as well as pre-treatment conditions for PCSELs. The epitaxy quality is shown to be essential for the device performance. Furthermore, the optimized regrowth condition is also applicable for photonic crystals consisted of triangular air holes, which open the window for further improvement.

 

NR-μLED were fabricated on monolithic epitaxial wafers. The color of NR-μLED can tune from yellow to blue by changing wall width and indium content. Red QDs were printed to NR-μLEDs for a full-color display. Al2O3 was deposited on the sidewall of NR-μLEDs, which improved the performance of the display.

 

Compact edge states can be excited in exciton-polariton condensates. The effects of spin-orbit coupling result in the flatbands in which the polariton localization can be formed inside the gap. We found the edge states are only extended inside a fraction of a single lattice period.

 

In-plane gate graphene transistors are fabricated on graphene grown directly on sapphire substrates by using e-beam lithography. With no interface with dielectric layers, higher field-effect mobility than the Hall mobility value are observed for the device, which is attributed to the reduced carrier scatterings of the thin channel length.