Session Index

In the work, we had integrated the tungsten diselenide (WSe2) atomic layer with the metal/insulation/metal (MIM) metasurface. The local surface plasmon resonance (LSPR) in MIM structure was optimized to match to the optical emission of the WSe2 monolayer. A 27-time enhancement in WSe2 optical luminescence was achieved in the experiment.

 

We demonstrate a Si-based period-chirped guided mode resonance filter to discriminate telecom o-band wavelengths with a filter linewidth of 1.04 nm, thus enables on-chip spectroscopy for near-infrared light with low cost.

 

We report on Ge waveguide light-emitting diodes on a germanium-on-insulator (GOI) platform. Room-temperature electroluminescence at 1550 nm was demonstrated and the optical properties of the devices are investigated. These results present an important step toward electrically-injected light sources for GOI-based electronic-photonic integrated circuits.

 

A new high aspect ratio nanostructure fabricated by nanosphere-lens-lithography (NSL) to create an array of two silver-heaps by metal evaporation. By utilizing the COMSOL simulation, we optimize the scattering performance from 760-1460nm. Combining with surface-plasmon-resonance(SPR), we could gain a promising application on optical trapping, with low cost and commercial fabrication.

 

Ge-filled Si micro-holes were suggested and demonstrated for high-efficiency 1550 nm photo-absorption in this work. By this structure, a high-density infrared (1550 nm) photo-receiver integrated optoelectronics could possibly be implemented on Si. With a 6μm depth micro-hole array, the 1550nm infrared light absorbance is 4.6 % higher than silicon-based structure.

 

To realize the light and thermal impact on the quantum dots, the CdSe/ZnS quantum dot in toluene solution was mixed with polydimethylsiloxane and then filled on the LED. We designed two package structure to encapsulate four different luminance intensity blue light emitted diode in 5070 lead frames respectively.

 

Detection of molecules at extremely lower concentrations is demonstrated successfully on a surface-enhanced Raman spectroscopic (SERS) substrate fabricated by electrochemical deposition of silver nano-particles into thin walled nano-channels of anodic aluminum oxide (AAO). The silver nanoparticles deposited into the nanochannels facilitates the detection of molecules at lower concentrations.

 

Effective enhancement of SERS signal by the action of strengthened electromagnetic field and the electron accumulation at the semiconductor/noble-metal junction using ZnO/Ag hybrids is presented. The obtained limit of detection is as low as 10^-14 M and the enhancement factor is about 10^11.