Session Index

Nanophotonic Materials and Devices

Poster Session I
Friday, Dec. 4, 2020  15:40-17:30
Presider: Prof. Shun-Wei Liu
Room: 6AB Courtyard
Manuscript ID.  0020
Paper No.  2020-FRI-P0101-P001
Chiou Yih-Peng
Award Candidate
A Wide-angle Wideband Polarization-insensitive Metamaterial Absorber Based on UPML Mechanism
Chiou Yih-Peng;Chiou Yih-Peng

A wide-angle, wideband, and polarization-insensitive metamaterial (MM) absorber
was studied based on the theoretical concept of uniaxial perfect matching layer (UPML) in
terahertz range. The MM absorber was designed as a multi-layered anisotropic array structure
consisting of a conductive VIA-rod, a bi-layered slot-FSS, and a split-ring resonator (SRR).

Manuscript ID.  0182
Paper No.  2020-FRI-P0101-P002
Szu-Yao Mao
Orbital Angular Momentum of Gold Nanostructures Irradiated by Circularly Polarized Light
Jia-Yun Luo;Szu-Yao Mao;Yun-Cheng Ku;Mao-Kuen Kuo;Jiunn-Woei Liaw

As a gold nanostructure is irradiated by a circularly polarized light, the winding behaviors of the streamlines of the real part of Poynting vector and orbital momentum density are observed. This phenomenon implies that the orbital angular momentum is induced by the spin-orbit interaction of photons via the plasmonic nanostructure.

Manuscript ID.  0704
Paper No.  2020-FRI-P0101-P003
Chang-Yue Chiang
Fiber-optic plasmonic immunoassay sensor using a novel multi-microchannel lab-on-a-chip
Chang-Yue Chiang;Chien-Hsing Chen;Cheng-Ling Lee;Jian-Neng Wang;Chien-Tsung Wang

Multi-microchannel fiber-optic plasmonic immunoassay sensor system for the simultaneous detection of samples. The system requires only 30 μL of sample for detection. Results show that the multi-microchannel sensor system not only has good reproducibility, but excellent refractive index resolution (~10-6 RIU) and detection limits are ~10-8 g/mL for antibody.

Manuscript ID.  0324
Paper No.  2020-FRI-P0101-P004
Ruei-Hong Yan
Effect of Attached Guard Ring on the Breakdown Voltage of SAGCM InGaAs/InP Avalanche Photodiode
Ruei-Hong Yan;Hao-Hsiung Lin

We report on an attached guard ring design for a planar In0.53Ga0.47As/InP separate absorption, grading, charge and multiplication (SAGCM) avalanche photodiode by using a TCAD simulation. To suppress the edge breakdown, the double Zn diffusion process is used to form guard ring attached to the active region of the devices.

Manuscript ID.  0601
Paper No.  2020-FRI-P0101-P005
Zhe-Yuan Liu
Self-Assembled Film Assisted Photoreduction of Silver Nanoparticles for Raman Signal Enhancement
Zhe-Yuan Liu;Ji-Sheng Chen;An-Ting Lee;Tzyy-Jiann Wang

Size uniformity of silver nanoparticles photoreduced on the ferroelectric template is enhanced by the self-assembled film. The increase in the number of nanoparticles of suitable sizes for the localized surface plasmon resonance facilitates to increase the hotspot density. The produced SERS substrate possesses the 6.15-fold enhancement of Raman peak intensity.

Manuscript ID.  0467
Paper No.  2020-FRI-P0101-P006
Cheng-Yi Lin
Cheng-Yi Lin;Chen-Yi Lin;Chih-Ming Wang

Non-contact position measurement plays an important role for autonomous cars. In this work, we propose a 3D position sensing method based on the inherent chromatic nature of metalens. By analyzing the color coordinate of the chromatic images, we experimentally demonstrate a position measurement with a centi-meter-resolution measurement result.

Manuscript ID.  0645
Paper No.  2020-FRI-P0101-P007
Jing-Ting Wang
Award Candidate
Heterogeneously Integrating Photonic Crystal Lasers on Silicon-Based Platforms by Transfer Printing
Jing-Ting Wang;Wei-Shan Fan;Tsan-Wen Lu;Po-Tsung Lee

We use the transfer printing technique to integrate 1D photonic crystal nanobeam lasers onto SiO2 substrate and SiNx waveguide respectively, as well as characterizing their lasing properties before and after transferring. This technique provides an efficient and precise way for heterogeneous integration between III-V semiconductor-based light sources and silicon-based circuits.

Manuscript ID.  0664
Paper No.  2020-FRI-P0101-P008
Phase reconstruction via polarization-independent metasurfaces at visible wavelength

We simulated a polarized incident light passed through the panel via FDTD analysis. We calculated the required spatial phase profile at specific position via placing a monitor behind the panel. Thus, we designed our metasurfaces by corresponding the phase shift to the opposite required spatial phase profile.

Manuscript ID.  0741
Paper No.  2020-FRI-P0101-P009
Hsu-Kai Yang
Enhancement of Optical Properties of InAs/InSb/AlSb Type II superlattices by thermal annealing process
Hsu-Kai Yang;Wei-Sheng Liu;Po-Hao Chang;Tsun-Jie Ko;Ming-En Syu;Hui-Wen Cheng;Shao-Yi Lee;Jen-Inn Chyi

In this study, the rapid thermal annealing process at 450 °C was adopted for reducing the epitaxial defects and improving the photoluminescence properties of the InAs/InSb/AlSb type II supperlattice structures.

Manuscript ID.  0015
Paper No.  2020-FRI-P0101-P010
Kuan-Hsueh Peng
Preparation of CsPbBr3 nanocrystals chelating diphenylammonium bromide ligands for perovskite light-emitting devices
Ruei-Hong Shen;Kuan-Hsueh Peng;Sheng-Hsiung Yang

Cesium lead bromide nanocrystals (CsPbBr3 NCs) chelating diphenylammonium bromide (DPABr) were prepared via low temperature method with enhanced luminescent and electrical properties. The maximum brightness and current efficiency of the optimized light emitting device based on DPABr-modified CsPbBr3 NCs were enhanced 2.3- and 3.3-fold, respectively, relative to the pristine one

Manuscript ID.  0024
Paper No.  2020-FRI-P0101-P011
Sheng-Joue Young
High on/off ratio Field-Effect Transistor Based on Semiconducting Single-walled Carbon Nanotubes by Selective Separation
Sheng-Joue Young;Y. H. Liu;J. C. Jian;Z. D. Lin

A semiconducting single-walled carbon nanotube (SWCNT) FET was prepared using the simple technique of selective separation. The Raman spectrum of the transistor revealed that the m-SWCNTs and regioregular poly (3-dodecylthiophene) were completely removed, leaving only s-SWCNTs. The FET exhibited a high on/off ratio with a selective separation of 107.

Manuscript ID.  0199
Paper No.  2020-FRI-P0101-P012
Shang-Yang Yu
Laser-induced Plasmonic Nanobubbles in Gold Colloid
Chang-Hsuan Tu;Shang-Yang Yu;Jiunn-Woei Liaw

The lifetime of a group of nanobubbles induced by the irradiance of nanosecond pulsed laser in gold colloid was measured. Via a probing-laser detection system, the signal of a group of the cavitation of nanobubbles, which is owing to the plasmonic heating of gold nanoparticles, can be measured.

Manuscript ID.  0243
Paper No.  2020-FRI-P0101-P013
Chun-Wei Lin
Optical Trapping of 2D Gold Nano-Array on a Freestanding Polystyrene Bead
Yu-Chia Liu;Chun-Wei Lin;Yun-Cheng Ku;Mao-Kuen Kuo;Jiunn-Woei Liaw

The optical trapping of a two-dimensional gold nano-array on a freestanding polystyrene bead irradiated by a linearly polarized Gaussian beam is studied. The optical force field of the NP shows the difference between the front side and the back side of the gold nano-array w.r.t. the plane of incidence.

Manuscript ID.  0313
Paper No.  2020-FRI-P0101-P014
Shang-Yang Yu
Laser-Induced Microbubble in Gold Colloid
Chang-Hsuan Tu;Shang-Yang Yu;Mao-Kuen Kuo;Jiunn-Woei Liaw

The characteristics of laser-induced microbubble in gold nanorod (GNR) colloid is studied. It’s due to the optical breakdown vaporized surrounding medium. According to the features of these signals, we can divide the microbubbles into three types: a single bubble, coalesced bubble and split bubble.

Manuscript ID.  0384
Paper No.  2020-FRI-P0101-P015
Ya-Chih Wang
Fabrication of a Metallic-Dielectric Nanorod Array by Nanosphere Lithography for Plasmonic Sensing Application
Yuan-Fong Chou Chau;Kuan-Hung Chen;Ya-Chih Wang;Hai-Pang Chiang;Hung Ji Huang;Chih-Hsien Lai

A periodic metallic-dielectric nanorod array which consists of Si nanorods coated with Ag film is fabricated and characterized. The fabrication procedure is performed by using nanosphere lithography with reactive ion etching and followed by Ag thin film deposition. The proposed substrates provide a practical plasmonic nanorod-based sensing platform.

Manuscript ID.  0102
Paper No.  2020-FRI-P0101-P016
Yu -Meng Cao
Optoelectronic properties of ultra thin Ga-doped ZnO films are enhanced by a multiple buffer layers process
Yu -Meng Cao;Yen-Sheng Lin;Jia-Jun Liu;Yong-Cheng Wei

In this study, the multiple buffer layers process is used to enhance the optoelectronic properties of ultra thin Gallium-doped ZnO (GZO) film. Different multiple buffer layers of 0, 1, 2, 3, 4 were chosen, and the intermittent time between for each buffer layer was fixed at 10 min.

Manuscript ID.  0106
Paper No.  2020-FRI-P0101-P017
Chen-An Li
Triple-microdisk Quantum Dot Laser
Chen-An Li;Tsong-Sheng Lay

Triple-microdisk lasers are fabricated on InGaAs QD wafer to investigate the PT-symmetry. At the low temperature (80K), an obvious laser output at =1107nm of whispering-gallery mode m=1,13 is observed by pumping only one of the triple-microdisk.

Manuscript ID.  0286
Paper No.  2020-FRI-P0101-P018
Ying-Can Lin
Ta2O5 waveguide crossings using multimode interference couplers
Ying-Can Lin;Chun-Ta Wang

This work designs a multimode interference (MMI) based waveguide crossings that is using a Ta2O5 as a waveguide materials. Such a designed device has a low insertion loss of -20.28 dB and small size of 15.1 x 15.1 µm2. The feasibility of cascading multiple MMI waveguide crossings is also confirmed.

Manuscript ID.  0494
Paper No.  2020-FRI-P0101-P019
Spectral Image Measurement System for Surface Plasmance Resonance Biochips

We developed transmission multi-spectral system with stagger slits to let a small CMOS sensor cover all the spectral range. Use this system, we tested surface plasmon resonance (SPR) responses in gold nanoslit arrays under different glucose solution. The results show that the system can be used for the SPR measurement.

Manuscript ID.  0649
Paper No.  2020-FRI-P0101-P020
De-Ming Fu
Enhancing Light Emission from Monolayer MoS2 via Band-Edge Mode in 2D Photonic Crystal Slab
De-Ming Fu;Huan-Yueh Chu;Tsan-Wen Lu;Shih-Yen Lin;Po-Tsung Lee

By integrating large-area monolayer MoS2 with the 2D PhC SiNx slab, we couple light emission from MoS2 with the photonic band-edge mode in PhC SiNx slab. In experiments, we obtain over 23 times photoluminescence intensity than that of the MoS2 on a sapphire substrate.

Manuscript ID.  0639
Paper No.  2020-FRI-P0101-P021
Yu-Wei Huang
Charge Carrier Recombination in Cesium Lead Bromide Perovskite Micro-hemispheres
Yu-Wei Huang;Hsu-Cheng Hsu

The power-dependent photoluminescence and time-resolved photoluminescence were measured to investigate the charge carrier recombination rate of CsPbBr3 micro-hemispheres in the temperature range from 298K to 320K. Rate equation was used to calculate monomolecular and bimolecular recombination rate.

Manuscript ID.  0658
Paper No.  2020-FRI-P0101-P022
Sripansuang - Tangsuwanjinda
Sensitive Surface-enhanced Raman Scattering of Ag Decorated ZnO nano-architecture
Sripansuang - Tangsuwanjinda

In this work, the semiconductor ZnO were successfully used with plasmonic metal Ag nanoparticles for fabricating the hybridization of SERS(Surface Enhanced Raman Scattering). The aluminium glass was the substrate that we chose to be the base of SERS chip (Al@AgNPs) for monitoring DPY contaminant in water solution.

Manuscript ID.  0732
Paper No.  2020-FRI-P0101-P023
Radhika Bansal
Mid-Infrared GeSn Vertical-Cavity Light-Emitting Diodes on Silicon-on-Insulator
Chen-Yang Chang;Radhika Bansal;Guo-En Chang

We report on mid-infrared (MIR) GeSn vertical-cavity light-emitting diodes grown on silicon-on-insulator platform. Room-temperature electroluminescence with clear Fabry-Perot modes in the MIR region was demonstrated. These results pave the way for efficient on-chip light sources for MIR electronic-photonic integrated circuits.

Manuscript ID.  0767
Paper No.  2020-FRI-P0101-P024
Chun-Ting Wu
Liquid crystal photo-alignment based on the dynamic structures of azo-dyes and polymers-doped liquid crystals
Chun-Ting Wu;Ko-Ting Cheng

This study reports liquid crystal (LC) photo-alignment of methyl-red (MR) adsorption based on the dynamic structures of azo-dyes and polymers-doped LCs. The dynamic structures of Williams domain can be initiated by applying suitable external voltages, and the doped MRs are simultaneously illuminated with green light to generate specific LC structures.

Manuscript ID.  0563
Paper No.  2020-FRI-P0101-P025
Szu-Yung Huang
Arrays of nanodisk oligomers fabricated using Nanospherical-Lens Lithography and Hole-Mask Lithography
Szu-Yung Huang;Snow H. Tseng;Yun-Chorng Chang

We demonstrate the fabrication of large-scale and periodic nanostructures using a combination method of Nanospherical-Lens Lithography (NLL) and Hole-Mask Lithography (HML). The subsequent material evaporation at various deposition angles will result in various types of nanodisk oligomers. The proposed method is ideal for industrialization of future nanophotonic applications.

Manuscript ID.  0687
Paper No.  2020-FRI-P0101-P026
Li-Ming Chiang
Highly Sensitive and Tunable Plasmonic Sensor Based on a Nanoring Resonator with Silver Nanorods
Li-Ming Chiang;Chung-Ting Chou Chao;Yuan-Fong Chou Chau;Hung Ji Huang;Hai-Pang Chiang

We numerically investigate a highly sensitive and tunable plasmonic refractive index sensor composed of a metal-insulator-metal waveguide with a side-coupled nanoring, containing silver nanorods using the finite element method. Results show a sensitivity of 2080 nm/RIU with a figure of merit and a quality factor of 29.92 and 29.67, respectively.

Manuscript ID.  0711
Paper No.  2020-FRI-P0101-P027
Po-Hao Chang
Development of an InAs/InSb/AlSb Type II Superlattice Short-Wavelength Infrared Photodetector
Po-Hao Chang;Wei-Sheng Liu;Tsun-Jie Ko;Ming-En Syu;Hui-Wen Cheng;Shao-Yi Lee;Jen-Inn Chyi

In this study, a short-wavelength infrared photodetector with a type-II InAs/InSb/AlSb superlattice p-i-n structure was prepared on an n-GaSb substrate. The photoluminescence wavelength of the detector was found at 2.8 um (77K), and the dark current density was measured as 5.8 × 10-10 A/cm2 under a bias of -0.05 V.

Manuscript ID.  0730
Paper No.  2020-FRI-P0101-P028
Yung-Chen Li
Study of the optical properties of InAs sub-monolayer quantum dots in an InGaAs(Sb)/GaAsSb double quantum well structure
Yung-Chen Li;Wei-Sheng Liu;Ming-Hsuan Tsai;Po-Hao Chang;Ming-En Hsu;Kai-Yang Hsu

In this study, an InAs sub-monolayer was sandwiched in an InGaAs(Sb)/GaAsSb double-well structure to enhance the crystal quality and optical properties. The photoluminescence intensity of the QDs improved significantly compared to the reference GaAs capped QD structure when antimony was incorporated into the InGaAsSb inner quantum well.

Manuscript ID.  0185
Paper No.  2020-FRI-P0101-P029
Yu-Sin Liu
Fabrication of Biochip Applied For Impedance and Photoelectrochemical Response Analysis of Cancer Cells
Yu-Sin Liu;Shen-Zhe Wang;Hsiang-Chen Wang

The main purpose of this study which is we used a Serrated Interdigitated Electrode (SIE) to distinguish cancer cells.Four cancer cells with different sites, CE81T, OE21, A549, and TSGH8301.Different numbers of cancer cell samples are placed on the electrodes in sub-μL volume to detect cancer cells by photoelectrochemical measurement.

Manuscript ID.  0312
Paper No.  2020-FRI-P0101-P030
Chang-Yu Lin
High-performance Flexible Phototransistor Based on 2D Hafnium Selenosulfide
Chang-Yu Lin;Ambika Subramanian;Ji-Jhih Yeh;Tsung-Pin Lu;Cheng-Yung Ho;Ming Xian Xian;Raman Sankar;Rajesh Kumar Ulaganathan;Kechao Tang

A giant photoresponsivity and high specific detectivity are exhibited by a device fabricated by exfoliating HSS of nano-thickness. The photoresponsivity of this photodetector is significantly larger than those fabricated with other existing Hf-based chalcogenides. The layered multi-elemental 2D chalcogenide hold great promise for future wearable electronics and integrated optoelectronic circuits.

Manuscript ID.  0098
Paper No.  2020-FRI-P0101-P031
Zhong-Ting Zheng
Straight CuO nanorod structures inserted in Al-doped ZnO layers as the electrode of touch sensor
Zhong-Ting Zheng;Yen-Sheng Lin;Xuan-Yu Wu;Mayer Joachim

In this study, the optimum distribution of a straight CuO nanorod structure inserted in Al-doped ZnO thin film is achieved; it has a minimum resistance of 1.25 × 10−3 Ω · cm, and the average transmittance in the range 400–800 nm is about 82%, which is good for touch sensor.