Session Index

We have incorporated a metal ring to act as an effective mode-selection filter to suppress the emission of the higher-order modes. The 850 nm MR VCSEL with a 3 μm MR in diameter exhibits an output power of 0.83 mW and SMSR of 40.2 dB when biased at 4 mA.

 

We present results of our 850 nm thermally-stable vertical cavity surface-emitting lasers (VCSELs). With a strained InGaAs/AlGaAs quantum well design optimized for high-speed operation at higher operating temperature, the 3dB modulation bandwidth of InGaAs QW oxide ~4.6 µm aperture diameter reaches 12.81 GHz at 85 oC.

 

We present the formation of hybrid resonators by conjugate reflection in the semiconductor circular ring laser diode. The L-I and spectrum measurements of mode spacing of Y-junction coupler waveguide terminal and the Soilton waveguide terminal were studied to verify the formation of these hybrid resonators.

 

Five-peaks in orange-yellow band (580~595 nm) laser source was demonstrated by using intra-cavity second harmonic generation technique on periodically-poled-lithium-tantalate (PPLT). The slope efficiency and threshold of the device are 14.63 % and 60 MW/cm2. Further, we also propose another design to achieve tunable source from 550 nm to 605 nm.

 

To increase the eciency of the solar cell, a three-bands Poisson and drift-diusion model is developed to simulate the intermediate band (IB) of MoS2 nanoribbon solar cell, which could absorb the low energy photons through the IB to the conduction band. The new model shows that under certain condition, the short circuit current increases signicantly. However, to maintain the high open circuit voltage, the downward transition rate needs to be limited.