Session Index

Solid State Lighting

Solid State Lighting I
Thursday, Dec. 3, 2020  16:20-17:50
Presider: Prof. Wei-Chih Lai
Prof. Yuh-Renn Wu
Room: 6AB Room 525
16:20 - 16:50 Manuscript ID.  0805
Paper No.  2020-THU-S0801-I001
Invited Speaker:
Chi Ching Kuo

Multifunctional Electrospun Nanofiber Chemosensor and Light-Emitting Diodes Based on Perovskite-Polymer Nanofiber Membranes or Films
Chi Ching Kuo

We report the fabrication and property of multifunctional electrospun nanofiber chemosensor and perovskite based light-emitting diodes. RGB full-color-switchable chemosensors that are able to simultaneously detect pH and Hg2+ and are based on highly porous fluorescent electrospun nanofibers. Perovskite QDs embedded into polymeric to increase the photostability of light emitters for applications to lighting and backlight displays.

16:50 - 17:05 Manuscript ID.  0387
Paper No.  2020-THU-S0801-O001
Chun-Xin Ye
Award Candidate
Chip-Size Effect on Performance of Blue μ-LEDs Using a Laser Direct Writing Technique
Chun-Xin Ye;Hsuan-Jen Chen;Po-Hao Chen;Bo-Sheng Lee;Po-Wei Chen;Po-Wen Hsiao;Dong-Sing Wuu

μ-LEDs with chip size down to 10×10 μm2 were achieved using a laser direct writing technique. Both the increased current density and blue-shifted emission were observed due to the downsizing effect. The EQE of 10×10 μm2 μ-LED was 18.8%, which is favoring the high-resolution μ-displays.

17:05 - 17:20 Manuscript ID.  0166
Paper No.  2020-THU-S0801-O002
Shang-En Zhong
Award Candidate
Performance Investigation of Ga2O3-based Deep Ultraviolet Light-Emitting Diodes with Multi-quantum Wells
Shang-En Zhong;Haou-Chun Wang;Hsin-Ying Lee;Ching-Ting Lee

In this work, the deep ultraviolet light-emitting diodes (DUV-LEDs) with multi-quantum wells (MQWs) constructed using 5 pairs of a gallium oxide (Ga2O3) well and an aluminum oxide-doped gallium oxide (Ga2O3:Al2O3) barrier were fabricated. According to the electroluminescence measurement of the DUV-LEDs, the peak wavelength of 243 nm was obtained.

17:20 - 17:35 Manuscript ID.  0678
Paper No.  2020-THU-S0801-O003
Chi-Shou Wu
Award Candidate
Long-Distance Projection Luminaire Based on White LEDs with Low Power Consumption
Ching-Cherng Sun;Chi-Shou Wu

A light-emitting diode luminaire with light weight, energy saving, and low cost by using nine optical modules to produce a projection distance of 3.1 km with driving power of 41.8 watts has been verified by precise experiment.

17:35 - 17:50 Manuscript ID.  0339
Paper No.  2020-THU-S0801-O004
Qian-Hua Zhuo
Award Candidate
Performance Enhancement of Red Quantum Dot Light Emitting Diodes with Hybrid Hole Injection and Transport Layers
Qian-Hua Zhuo;Hsin-Chieh Yu;Chih-Min Fu

Characteristics of red quantum dots light emitting diodes (QLEDs) with NiOx hole injection layer (HIL) prepared by sol-gel method and Poly-TPD as hole transport layer (HTL) were demonstrated. The performance enhancement of QLEDs with NiOx HIL exhibited the maximum luminance (Lmax) of 64,244 cd/m2.


Solid State Lighting

Solid State Lighting II
Friday, Dec. 4, 2020  13:10-15:40
Presider: Prof. Ray-Hua Horng
Room: 6AB Room 525
13:10 - 13:40 Manuscript ID.  0826
Paper No.  2020-FRI-S0802-I001
Invited Speaker:
Kazuhiro Ohkawa

InGaN-based red LEDs using strain-compensated MQWs with AlN/AlGaN barriers
Kazuhiro Ohkawa;Daisuke Iida;Zhe Zhuang

The InGaN active region contains a large amount of indium to emit red light. The high-In-content InGaN has a large lattice mismatch to the p- or n-GaN layers, resulting in the introduction of a huge number of defects, interface roughness, and weaker light emission. However, we have improved the performance of red LEDs by introducing AlN/AlGaN barrier layers among InGaN QWs. Such strain control is the crucial point to realize higher efficiency.

13:40 - 13:55 Manuscript ID.  0240
Paper No.  2020-FRI-S0802-O001
Yu-Hsuan Chen
Graphene Transfer-printed on Ultraviolet Light-emitting Diode as Transparent Current Spreading Layer
Yu-Hsuan Chen

The GaN ultraviolet light emitting diode with a porous AlGaN distributed Bragg reflectors and Graphene/ITO transparence conductive layer was fabricated through the Graphene transfer-printed process. High efficiency DBR-LED with Graphene/ITO bilayers was observed due to high current spreading process by adding the Graphene on the ITO conductive layer.

13:55 - 14:10 Manuscript ID.  0481
Paper No.  2020-FRI-S0802-O002
Hung Jui Chen
The Optical Characterization of Graphene Oxide With Different Oxidation Levels.
Hung Jui Chen;Hsuan Chu Lin

In this work, graphene oxide with different oxidation levels was prepared. Various optical characterization tools were used to analyze graphene oxide with different oxidation levels. We would like to investigate the effects of oxidation levels of graphene oxide on carrier lifetime.

14:10 - 14:25 Manuscript ID.  0774
Paper No.  2020-FRI-S0802-O003
Yung-Tang Nien
Microstructure of CO2 Laser Sintered YAG:Ce Phosphor Ceramics with Solid State Reaction Treatment
Pui-jung Chen;Yung-Tang Nien;Rui-He Zheng

This study applied CO2 laser and solid state reaction to completely transform precursor into Y3Al5O12:Ce (YAG:Ce), exploring the crystal structure and microstructure. YAG:Ce grains grow largely (1500%) as compared to the solid state reacted or laser sintered ones. Transmission electron microscopy revealed round particles in YAG:Ce grains and at boundaries.

14:25 - 14:40 Manuscript ID.  0316
Paper No.  2020-FRI-S0802-O004
Kuei-Hung Chu
Investigation of Hybrid Blue Quantum-Dot Light-Emitting Diodes with Different Charge Transport Layers
Kuei-Hung Chu;Hsin-Chieh Yu;Ya-Li Chang

In this study, Poly(9-vinylcarbazole) (PVK) and Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)] (TFB) were used as the hole transport layers (HTLs) for solution-processed quantum-dot light-emitting diodes (QLEDs) accompanied with MgZnO nanoparticles (NPs) electron injection-transport layer (EIL/ETL). QLEDs with TFB HTL demonstrated higher maximum luminance (Lmax) of 6,001 cd/m2 than that of PVK.

14:40 - 14:55 Manuscript ID.  0025
Paper No.  2020-FRI-S0802-O005
Ming-Fong Lin
Investigation on Strain of GaN-based LED with Different Epitaxy Thickness by Confocal Raman System
Ming-Fong Lin;Chia-Jui Chang;Tien-Chang Lu

To have a better understanding of strain distribution in GaN-based LED structures, three-dimensional strain analyses were conducted on a series of samples with different epi-layer thickness, and the tendencies of strain evolution from substrate to sample surface were compared.


Solid State Lighting

Poster Session I
Friday, Dec. 4, 2020  15:40-17:30
Presider: Prof. Chia-Feng Lin
Prof. Zong-Liang Tseng
Room: 6AB Courtyard
Manuscript ID.  0441
Paper No.  2020-FRI-P0801-P001
Pang Liang Liu
Award Candidate
Effect of Sn Content on the Optical Properties and Composition of Thermally Evaporated Cu2ZnSnSe4 Thin Films on FTO Substrate
Pang Liang Liu;Jui Fu Yang;Shou Yi Kuo

The effect of Sn content on the optical properties and composition of thermally evaporated Cu2ZnSnSe4 thin films on FTO substrate is investigated. When Sn content decrease too much, it led to that the grain size of the surface of the films become small and the band gap reduce a little.

Manuscript ID.  0006
Paper No.  2020-FRI-P0801-P002
Chang JUI Chen
Award Candidate
Optimized design of a light-emitting diode mosquito catching system
Chang JUI Chen

We used the SolidWorks software package to develop modules and processed simulations for a novel light-emitting diode mosquito catching system, which were then imported into TracePro. Optical simulation was conducted to investigate the mosquito trapping efficiency of the proposed modules. The results were compared to optimize mosquito trapping efficiency

Manuscript ID.  0139
Paper No.  2020-FRI-P0801-P003
Tzu-Chieh Hsu
Award Candidate
Simplified measurement of thermal conductivity for the prediction of thermal distribution in flexible OLEDs
Tzu-Chieh Hsu;An-Chi Wei;Jyh-Rou Sze

In this study, we propose a methodology to measure the thermal conductivity of polyethylene-terephthalate (PET), a plastic substrate utilized in flexible organic light-emitting diodes (FOLED). By means of the measured thermal conductivity, we can further predict heat distribution of a FOLED.

Manuscript ID.  0702
Paper No.  2020-FRI-P0801-P004
Chih-Kang Chang
Award Candidate
Power Switching Behaviors of GaN-on-Si HEMTs with Deep Source Metal Trenches
Chih-Kang Chang;Jian-Jang Huang

In this work, a source metal trench for GaN based HEMTs toward the buffer region to alleviate trapping of channel carriers in the buffer region is proposed. The results indicate less dynamic on-resistance increase at higher drain and gate stress voltages of the device with source trench in the mesa.

Manuscript ID.  0762
Paper No.  2020-FRI-P0801-P005
Dai-Jie Lin
Award Candidate
Reduce current collapse in AlGaN/GaN HEMTs with dual-gate structure
Jhih-Yuan Yang;Chih-Kang Chang;Dai-Jie Lin;Jian-Jang Huang

We have demonstrated dual-gate AlGaN/GaN high-electron-mobility-transistors (HEMTs) by comparing with single-gate AlGaN/GaN HEMTs. In terms of current collapse characteristics, the dual-gate AlGaN/GaN HEMT shows a small change rate in Ron at various off-stress-bias which means the dual-gate structure can mitigate the effect of current collapse.

Manuscript ID.  0556
Paper No.  2020-FRI-P0801-P006
Quang-Khoi Nguyen
Award Candidate
A novel solution for solving the blue light hazard problem in phosphor-converted white light emitting diodes
Quang-Khoi Nguyen;Shih-Kang Lin;Chi-Shou Wu;Yeh-Wei Yu;Benoît Glorieux;Tung-Hsun Yang;Ching-Cherng Sun

The unavoidable blue light hazard that caused by overheat in phosphor-converted white light-emitting diodes was solved effectively by utilizing of thermal-chromaticity material. The hazard to the user's eyes is effectively prevented and simultaneously user is reminded to replace the new lamp.

Manuscript ID.  0308
Paper No.  2020-FRI-P0801-P007
Yu-Liang Lin
Award Candidate
Patterned Microstructure Design of Single Crystal Phosphor and its Application to Laser Projector
Yu-Liang Lin;Meng-Hsuan Lin;Tsung-Xian Lee

Single crystal Phosphor provide excellent conversion efficiency and thermal stability. However, its unique optical properties of high transparency and high refractive index cannot effectively provide uniform mixed white light. We proposed different patterned structural designs and they can perform their best performance in different lighting applications.


Solid State Lighting

Poster Session II
Saturday, Dec. 5, 2020  10:30-12:30
Presider: Prof. Wen-Jeng Ho
Room: 6AB Courtyard
Manuscript ID.  0002
Paper No.  2020-SAT-P0802-P001
Hung-Chung Li
Visual characteristics of afterimage induced by LED dot matrixes
Hung-Chung Li

Three psycho-visual experiments are carried out to investigate the visual afterimage characteristics of high luminance LED with different sizes of dot matrix under dark surround conditions. As a result, the intensity level and the use of a diffuser obviously influence the visual characteristics of the afterimage.

Manuscript ID.  0036
Paper No.  2020-SAT-P0802-P002
Chun-Liang Lin
Design of Heat Sink Dimension to Improve Thermal Characteristics of High-Power LED Bulbs
Wei-Zhang Li;Chun-Liang Lin

The temperature of LED surface decreased by adjusting width and height of heat sink, from 90 to 83.6°C and from 96.9 to 80.7°C, respectively. Compared with width, adjusting height of heat sink significantly reduce the temperature by 9.6%

Manuscript ID.  0042
Paper No.  2020-SAT-P0802-P003
C. C. Yang
Light Color Conversion Efficiency Enhancement of Colloidal Quantum Dot through Its Linkage with Synthesized Metal Nanoparticle on a Light-emitting Diode
Yao-Tseng Wang;Chi-Wu Liu;Po-Yu Chen;Ruei-Nan Wu;Chia-Chun Ni;Cheng-Jin Cai;Yean-Woei Kiang;C. C. Yang

Four surface-modified and hence positively-charged metal nanoparticles (NPs) of different localized surface plasmon resonance wavelengths are synthesized for linking with negatively-charged, red-emitting colloidal CdZnSeS/ZnS quantum dots (QDs) on the top surface of a blue-emitting InGaN/GaN quantum well light-emitting diode through electro-static force. The metal NP-QD linkage leads to a short...

Manuscript ID.  0143
Paper No.  2020-SAT-P0802-P004
Ting-Wei Hsu
The Output Power Enhancement of Light-Emitting Diodes with Leaf Structure Surface
Ting-Wei Hsu;Pao-Keng Yang;Shang-Ping Ying

The leaf-structures are patterned onto top surface of a LED to reduce the total
internal reflection at the smooth interface between the encapsulant and air. The optical
characteristics of the LED covered with the replication of leaf surface structure are measured to
verify the enhancement of the LEDs.

Manuscript ID.  0334
Paper No.  2020-SAT-P0802-P005
Hong-Ye Lai
Study of Perovskite CsPbI3 with TOPO Color Conversion Quantum Dot Film in Red Light-Emitting Devices
Hong-Ye Lai;Yu-Chun Yeh;Ching-Ho Tien;Lung-Chien Chen

Mixing different ratios of perovskite CsPbI3 quantum dots and Trioctylphosphine oxide (TOPO) solutions to explore the difference between them, and further explore the effects of doping TOPO and adding UV-type QD optical glue on perovskite CsPbI3 with TOPO quantum dots, and apply it to color conversion devices.

Manuscript ID.  0359
Paper No.  2020-SAT-P0802-P006
Chia-Lung Tsai
Effect of ICBA:modified-C60 electron transfer layer on the structural and optical properties of perovskite light-emitting diodes (PeLEDs)
Chia-Lung Tsai;Yi-Chen Lu;Chia-Yu Yu;Chia-Wei Chen;Chih-Min Yu

The ICBA:modified C60 electron transport layer (ETL) is proposed for the PeLEDs. As a result of improved perovskite/ETL interfacial quality and uniform carrier distribution within the MAPbBr3, the improvement in the output luminance of the PeLEDs is achieved. Furthermore, PeLED-based optical communication is shown to be feasible.

Manuscript ID.  0480
Paper No.  2020-SAT-P0802-P007
Jhih-Yuan Yang
Improving the RF Performance of GaN HEMTs by Partial Substrate Removal
Jhih-Yuan Yang;Jian-Jang Huang;Ching-Yu Shih;Dai-Jie Lin

Here we propose Si substrate removal technology for HEMTs to alleviate RF loss. By removing the Si substrate, the power gain cut-off frequency is improved mainly due to a higher output resistance. Finally, we develop a small signal model that includes parasitic elements of the Si substrate.

Manuscript ID.  0584
Paper No.  2020-SAT-P0802-P008
Jing-Han Ke
Evaluation of Static Work Attention Under Different Office Lighting Environments
I-Chieh Chen;Jing-Han Ke;Yi-Chun Chen

This study evaluates users’ attention levels under different office lighting environments by utilizing electroencephalography and self-evaluated questionnaires. The signal processing involves the combination of Hilbert-Huang transform, probability density function towards spectral power, and receiver operating characteristic curves with their area under the curves.

Manuscript ID.  0028
Paper No.  2020-SAT-P0802-P009
Dian Luo
Highly Efficient White Light-Emitting Electrochemical Cells on Diffusive Substrates
Yan-Zhi Chen;Dian Luo;Chi-Haw Hsiang;Rong-Huei Yi;Ching-Hsuan Lin;Chin-Wei Lu;Chih-Hao Chang;Hai-Ching Su

Enhancing device efficiencies of the white light-emitting electrochemical cells (LECs) is realized by employing substrates with embedded diffusive layers containing scattering TiO2 nanoparticles. The maximal external quantum efficiency and power efficiency of the white LECs employing the proposed diffusive substrates reach 22.0% and 41.6 lm W-1, respectively.

Manuscript ID.  0111
Paper No.  2020-SAT-P0802-P010
Shu-Yi Ho
Blue Organic Light-Emitting Diodes with High Blue Index
Shu-Yi Ho;Hsiang-Wei Tseng;Yi-An Chen;Hsiao-Wen Hung

This paper reports an optical structure design method with the predicted performances of blue organic light-emitting diodes with high blue index. By adjusting the thickness of transport layers, the electroluminescent spectra could be narrowed and enhanced. The blue index could be increased from 71 to over 120.

Manuscript ID.  0149
Paper No.  2020-SAT-P0802-P011
Ming-Hao Zhou
The Output Power Enhancement of the White LEDs Using β-carotene Based Natural Dye with Remote Phosphor Structure
Ming-Hao Zhou;Bing-Mau Chen;Shang-Ping Ying

The β-carotene was encapsulated in remote yellow phosphor layer to achieve the white light LEDs with low correlated color temperature (CCT).By combining the yellow phosphor and β-carotene with the blue LED chip, the white light emission of the white LEDs with improved color rendering index (CRI) can be obtained.

Manuscript ID.  0040
Paper No.  2020-SAT-P0802-P012
C. C. Yang
Plasmonic Dicke Effect in an InGaN/GaN Multiple Quantum Well Structure
Wai Fong Tse;Ruei-Nan Wu;Cai-Chen Lu;Yi-Chiao Hsu;Yen-Po Chen;Sheng-Yang Kuo;Yu-Cheng Su;Ping-Hsiu Wu;Yang Kuo;Yean-Woei Kiang;C. C. Yang

The plasmonic Dicke effect means a cooperative emission mechanism of multiple light emitters when they are simultaneously coupled with the same surface plasmon (SP) mode of a metal nanostructure to achieve a higher collective emission efficiency. We compare the enhancements of emission efficiency among a series of SP-coupled InGaN/GaN quantum-well..

Manuscript ID.  0337
Paper No.  2020-SAT-P0802-P013
Chun-Liang Lin
Increase Luminous Efficacy of WLEDs with Uniform Spectral Power Distribution Through Phosphors in Silicone/Phosphor in Glass Stacked Package
Zhen-Jin Wang;Li-Yu Huang;Chun-Liang Lin

The correlated color temperature, color rendering index, and luminous efficacy of white LEDs with cyan, green and red phosphors in silicone/yellow phosphor in glass at 350 mA were 4200K, 90.9 and 76 lm/W (increase 18.4%), respectively. WLEDs with uniform SPD have improved luminous efficacy through the new phosphor configuration.

Manuscript ID.  0399
Paper No.  2020-SAT-P0802-P014
Ming-Feng Tsai
Light extraction of ultraviolet light emitting
Ming-Feng Tsai

Since there are many materials which will absorb ultraviolet light, therefore, people are finding different ways to improve luminous power of UVC LEDs in recent years. In this work, we manufacture the omnidirectional reflector on UVC LEDs, which is one of the methods to improve luminous power of UVC LEDs.

Manuscript ID.  0022
Paper No.  2020-SAT-P0802-P015
Nan Ming Lin
Simulation and Analysis of a Surgical Lamp Module with a Chip On Board (COB) Light-Emitting Diode
Nan Ming Lin

in this work, a chip on board (COB) was used as a surgical lamp light was found that the center illumiance was 66122 lux. on the other hand,the d50 and d10 was 98 mm and 164mm,respectively.In other word, the d50/d10 was 0.59 (i.e., meet regulation,0.5)

Manuscript ID.  0311
Paper No.  2020-SAT-P0802-P016
Chih-Yu Tsai
Analysis of Solid Suspended Particles using Near Infrared Spectroscopy and Partial Least Squares Regression
Chih-Yu Tsai;Meng-Hsuan Lin;Yu-Liang Lin;Jian-Yu Shen;Tsung-Xian Lee

This paper investigates the infrared absorption behavior of solid suspended particles in a quantitative way. By using near infrared spectroscopy and partial least squares regression (PLSR), we can explore the changes in concentration caused by the internal transmission of IR light in a real smog-filled environment.

Manuscript ID.  0443
Paper No.  2020-SAT-P0802-P017
Nan Ming Lin
Formation of a Half Mirror and Its Effect On Mirror Effect
Nan Ming Lin

In this work, a half mirror with an Al film was formed by using a thermal evaporation. Furthermore, the proposed half mirror can effectively achieve a good mirror effect. In other word, a deep mirror effect can be formed by using an Al mirror and an a half mirror.

Manuscript ID.  0540
Paper No.  2020-SAT-P0802-P018
Apoorv Mahesh Chaudhari
Hardware for Controlling a Dynamic Lighting System
Apoorv Mahesh Chaudhari;Chiung Reng Tai;Aien White;Nafia AL-Mutawaly;Yeh-Liang Hsu;Jonathon David White

Light is a non-pharmacological method to improve the sleep cycle, wakefulness, and quality of life. Based on ESP32 micro-controllers, interacting through ESP-NOW protocol. The hardware has been developed to interact with and control 8 LED strips to produce white light with a time-varying CCT.