Session Index

Solid State Lighting

Solid State Lighting II
Friday, Dec. 4, 2020  13:10-15:40
Presider: Prof. Ray-Hua Horng
Room: 6AB Room 525
Notes:
13:10 - 13:40 Manuscript ID.  0826
Paper No.  2020-FRI-S0802-I001
Invited Speaker:
Kazuhiro Ohkawa

InGaN-based red LEDs using strain-compensated MQWs with AlN/AlGaN barriers
Kazuhiro Ohkawa;Daisuke Iida;Zhe Zhuang

The InGaN active region contains a large amount of indium to emit red light. The high-In-content InGaN has a large lattice mismatch to the p- or n-GaN layers, resulting in the introduction of a huge number of defects, interface roughness, and weaker light emission. However, we have improved the performance of red LEDs by introducing AlN/AlGaN barrier layers among InGaN QWs. Such strain control is the crucial point to realize higher efficiency.

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13:40 - 13:55 Manuscript ID.  0240
Paper No.  2020-FRI-S0802-O001
Yu-Hsuan Chen
Graphene Transfer-printed on Ultraviolet Light-emitting Diode as Transparent Current Spreading Layer
Yu-Hsuan Chen

The GaN ultraviolet light emitting diode with a porous AlGaN distributed Bragg reflectors and Graphene/ITO transparence conductive layer was fabricated through the Graphene transfer-printed process. High efficiency DBR-LED with Graphene/ITO bilayers was observed due to high current spreading process by adding the Graphene on the ITO conductive layer.

 
 
13:55 - 14:10 Manuscript ID.  0481
Paper No.  2020-FRI-S0802-O002
Hung Jui Chen
The Optical Characterization of Graphene Oxide With Different Oxidation Levels.
Hung Jui Chen;Hsuan Chu Lin

In this work, graphene oxide with different oxidation levels was prepared. Various optical characterization tools were used to analyze graphene oxide with different oxidation levels. We would like to investigate the effects of oxidation levels of graphene oxide on carrier lifetime.

 
 
14:10 - 14:25 Manuscript ID.  0774
Paper No.  2020-FRI-S0802-O003
Yung-Tang Nien
Microstructure of CO2 Laser Sintered YAG:Ce Phosphor Ceramics with Solid State Reaction Treatment
Pui-jung Chen;Yung-Tang Nien;Rui-He Zheng

This study applied CO2 laser and solid state reaction to completely transform precursor into Y3Al5O12:Ce (YAG:Ce), exploring the crystal structure and microstructure. YAG:Ce grains grow largely (1500%) as compared to the solid state reacted or laser sintered ones. Transmission electron microscopy revealed round particles in YAG:Ce grains and at boundaries.

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14:25 - 14:40 Manuscript ID.  0316
Paper No.  2020-FRI-S0802-O004
Kuei-Hung Chu
Investigation of Hybrid Blue Quantum-Dot Light-Emitting Diodes with Different Charge Transport Layers
Kuei-Hung Chu;Hsin-Chieh Yu;Ya-Li Chang

In this study, Poly(9-vinylcarbazole) (PVK) and Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)] (TFB) were used as the hole transport layers (HTLs) for solution-processed quantum-dot light-emitting diodes (QLEDs) accompanied with MgZnO nanoparticles (NPs) electron injection-transport layer (EIL/ETL). QLEDs with TFB HTL demonstrated higher maximum luminance (Lmax) of 6,001 cd/m2 than that of PVK.

 
 
14:40 - 14:55 Manuscript ID.  0025
Paper No.  2020-FRI-S0802-O005
Ming-Fong Lin
Investigation on Strain of GaN-based LED with Different Epitaxy Thickness by Confocal Raman System
Ming-Fong Lin;Chia-Jui Chang;Tien-Chang Lu

To have a better understanding of strain distribution in GaN-based LED structures, three-dimensional strain analyses were conducted on a series of samples with different epi-layer thickness, and the tendencies of strain evolution from substrate to sample surface were compared.