Session Index

Solid State Lighting

Poster Session I
Friday, Dec. 4, 2020  15:40-17:30
Presider: Prof. Chia-Feng Lin
Prof. Zong-Liang Tseng
Room: 6AB Courtyard
Notes:
Manuscript ID.  0441
Paper No.  2020-FRI-P0801-P001
Pang Liang Liu
Award Candidate
Effect of Sn Content on the Optical Properties and Composition of Thermally Evaporated Cu2ZnSnSe4 Thin Films on FTO Substrate
Pang Liang Liu;Jui Fu Yang;Shou Yi Kuo

The effect of Sn content on the optical properties and composition of thermally evaporated Cu2ZnSnSe4 thin films on FTO substrate is investigated. When Sn content decrease too much, it led to that the grain size of the surface of the films become small and the band gap reduce a little.

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Manuscript ID.  0006
Paper No.  2020-FRI-P0801-P002
Chang JUI Chen
Award Candidate
Optimized design of a light-emitting diode mosquito catching system
Chang JUI Chen

We used the SolidWorks software package to develop modules and processed simulations for a novel light-emitting diode mosquito catching system, which were then imported into TracePro. Optical simulation was conducted to investigate the mosquito trapping efficiency of the proposed modules. The results were compared to optimize mosquito trapping efficiency

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Manuscript ID.  0139
Paper No.  2020-FRI-P0801-P003
Tzu-Chieh Hsu
Award Candidate
Simplified measurement of thermal conductivity for the prediction of thermal distribution in flexible OLEDs
Tzu-Chieh Hsu;An-Chi Wei;Jyh-Rou Sze

In this study, we propose a methodology to measure the thermal conductivity of polyethylene-terephthalate (PET), a plastic substrate utilized in flexible organic light-emitting diodes (FOLED). By means of the measured thermal conductivity, we can further predict heat distribution of a FOLED.

 
 
Manuscript ID.  0702
Paper No.  2020-FRI-P0801-P004
Chih-Kang Chang
Award Candidate
Power Switching Behaviors of GaN-on-Si HEMTs with Deep Source Metal Trenches
Chih-Kang Chang;Jian-Jang Huang

In this work, a source metal trench for GaN based HEMTs toward the buffer region to alleviate trapping of channel carriers in the buffer region is proposed. The results indicate less dynamic on-resistance increase at higher drain and gate stress voltages of the device with source trench in the mesa.


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Manuscript ID.  0762
Paper No.  2020-FRI-P0801-P005
Dai-Jie Lin
Award Candidate
Reduce current collapse in AlGaN/GaN HEMTs with dual-gate structure
Jhih-Yuan Yang;Chih-Kang Chang;Dai-Jie Lin;Jian-Jang Huang

We have demonstrated dual-gate AlGaN/GaN high-electron-mobility-transistors (HEMTs) by comparing with single-gate AlGaN/GaN HEMTs. In terms of current collapse characteristics, the dual-gate AlGaN/GaN HEMT shows a small change rate in Ron at various off-stress-bias which means the dual-gate structure can mitigate the effect of current collapse.

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Manuscript ID.  0556
Paper No.  2020-FRI-P0801-P006
Quang-Khoi Nguyen
Award Candidate
A novel solution for solving the blue light hazard problem in phosphor-converted white light emitting diodes
Quang-Khoi Nguyen;Shih-Kang Lin;Chi-Shou Wu;Yeh-Wei Yu;Benoît Glorieux;Tung-Hsun Yang;Ching-Cherng Sun

The unavoidable blue light hazard that caused by overheat in phosphor-converted white light-emitting diodes was solved effectively by utilizing of thermal-chromaticity material. The hazard to the user's eyes is effectively prevented and simultaneously user is reminded to replace the new lamp.

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Manuscript ID.  0308
Paper No.  2020-FRI-P0801-P007
Yu-Liang Lin
Award Candidate
Patterned Microstructure Design of Single Crystal Phosphor and its Application to Laser Projector
Yu-Liang Lin;Meng-Hsuan Lin;Tsung-Xian Lee

Single crystal Phosphor provide excellent conversion efficiency and thermal stability. However, its unique optical properties of high transparency and high refractive index cannot effectively provide uniform mixed white light. We proposed different patterned structural designs and they can perform their best performance in different lighting applications.